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Category: phototransistorDescription: Vlambda Osram NPN silicon phototransistor with improved V lambda characteristics for optoelectronic semiconductors. These compact phototransistors are suitable for various applications, including ambient light detectors, exposure measurement meters (for sunlight and artificial light), and sensors (for backlight dimming and control and drive circuits). Adapt to human eye sensitivity (V λ) # # # ambient light sensor, OSRAM Opto Semiconductors3451 -
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Category: photodiodeDescription: Photodiode, AEC-Q101, 60 ° half sensitivity, 1nA dark current, 850nm, SMD-3 pin7565 -
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Category: phototransistorDescription: Sharp Infrared phototransistor PT100MC0MP, 15 ° half sensitivity angle, maximum 900 nm, 2-pin1164 -
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Category: photodiodeDescription: EXCELITAS TECH C30737LH-230-80A Photodiode, 2.5nA, 800nm, LCC-68397
